سي وي ڊي سي سي سنگل ويفر سسپيٽر

Application scenarios or equipment: AMTA epitaxial equipment

Ultra-high purity (≤100ppb, ICP-E10 certified) and exceptional thermal/chemical stability for contamination-resistant growth of GaN, SiC, and silicon-based epi-layers. Engineered with precision CVD technology, it supports 6”/8”/12” wafers, ensures minimal thermal stress, and withstands extreme temperatures up to 1600°C.

ڪمپني جي طاقت

سيميڪس ليب ٽيڪنالاجي ڪمپني لميٽيڊ وٽ 2 آر اينڊ ڊي سينٽر، 2 پروڊڪشن بيس، 12 پروڊڪشن لائينون، 150+ ملازم آهن، ۽ آر اينڊ ڊي سيڙپڪاري 30 سيڪڙو کان وڌيڪ آهي. اسان جي پراڊڪٽ لي آئوٽ بنيادي طور تي ايل اي ڊي، آئي سي انٽيگريٽڊ سرڪٽ، ٽئين نسل جي سيمي ڪنڊڪٽر، فوٽووولٽڪ ۽ ٻين صنعتن ۾ استعمال ٿيندي آهي. سيميڪس ليب وٽ مضبوط آر اينڊ ڊي، پيداوار ۽ انٽيگريٽڊ ٽيسٽنگ ۽ تصديق جون صلاحيتون آهن. ساڳئي وقت، اسان هر سال لکين ڊالر جي سيڙپڪاري سان پنهنجي ٽيڪنالاجي ۽ سامان کي مسلسل بهتر بڻائي رهيا آهيون.

CVD SiC single wafer susceptor is mainly used in applied material silicon epitaxy equipment, the material is imported graphite + CVD SiC coating.

Core specification parameters: silicon carbide coating and graphite material：

مکيه ايپليڪيشنون:

As an accessory in AMTA epitaxy equipment, we can provide 6inch 8inch 12inch wafer susceptor.

CVD SiC single wafer susceptor in AMTA epitaxy equipment:

1. Wafer support and thermal field homogenization

As a core function of CVD SiC single wafer susceptor in AMTA epitaxy equipment In MOCVD, CVD and other epitaxy equipments, susceptor acts as a wafer carrier, and uniformly transfers heat to the wafer surface by means of resistance heating or RF heating to ensure the uniform growth of epitaxial layers (e.g. GaN, SiC).

Its high thermal conductivity design reduces the temperature gradient between the edge and the center, controlling the temperature uniformity within ±1°C and avoiding material stress defects.

2. Chemical Pollution Barrier

Graphite substrates directly exposed to process gases tend to oxidize to form CO₂ or powder, polluting the reaction chamber. CVD SiC coating acts as a protective layer to isolate graphite from corrosive gases and reduce particulate contamination on the wafer surface.

For example, in GaN epitaxy process, the coating can effectively resist the erosion of precursors such as NH₃ and TMGa, and guarantee the film purity.

3. Adaptation of diverse epitaxial processes

Third-generation semiconductors: for SiC or GaN epitaxy on SiC substrates, to meet the requirements of high-power devices for thick films and low defect rates.

Micro-LED manufacturing: to support high-precision positioning and thermal management of tiny-sized wafers (e.g., 8 inches), and to reduce wavelength distribution dispersion.

Material characteristics: excellent performance of CVD SiC

1. Ultra-high purity and dense structure

The silicon carbide (SiC) coating, deposited via chemical vapor deposition (CVD), achieves impurity levels of ≤100ppb (E10 standard) as verified by ICP-MS (Inductively Coupled Plasma Mass Spectrometry). This ultra-high purity minimizes contamination risks during epitaxial growth, ensuring superior crystal quality for critical applications such as gallium nitride (GaN) and silicon carbide (SiC) wide-bandgap semiconductor manufacturing.

The coating structure is dense and uniform, with low surface roughness, which reduces the risk of particle shedding and meets the high standard requirements of semiconductor clean rooms.

2. Extreme environmental resistance

High temperature resistance: It can maintain physicochemical stability at 1600°C, which is much higher than the oxidization threshold of graphite substrate (about 400°C), significantly prolonging its service life.

Corrosion Resistance: Extremely resistant to corrosive gases such as Cl₂, H₂ and plasma erosion, suitable for MOCVD, MBE and other harsh process environments.

3. Excellent thermal performance

Thermal conductivity as high as 300 W/mK ensures that the wafers are heated uniformly, reduces epitaxial layer thickness deviation (e.g., wavelength shift problems), and improves the yield of LEDs, power devices, and other products.

The coefficient of thermal expansion (4×10-⁶/K) is close to that of graphite substrate, which avoids cracking or peeling of the coating due to temperature change.

4. Mechanical strength and durability

Flexural strength up to 470 MPa, able to withstand high-frequency high-temperature-low-temperature cycling and mechanical stress, reducing maintenance frequency.

At present, the purity of our silicon carbide coating can reach E10 in ICP test, which is about 100 ppb, and this purity level is among the top level in China.