پي وي لاءِ پي اي سي وي ڊي گريفائيٽ ٻيڙي
| اصل جو هنڌ | چين |
| برانڊ جو نالو: | سيميڪس ليب |
| ماڊل تعداد: | PGBPV-01 |
| سرٽيفڪيٽ: | ISO9001 |
| گھٽ ۾ گھٽ مقدار جي مقدار | 1 مقرر |
| قيمت: | ڪسٽمائيز ڪوٽيشن لاءِ رابطو ڪريو |
| پيڪنگ جا تفصيل: | معياري برآمد پيڪيج |
| پهچائڻ جو وقت: | پهچائڻ جو وقت: آرڊر جي تصديق کان 20-35 ڏينهن پوءِ |
| ادائگي جي شرطن: | ٽي / ٽي |
| رسائي جي صلاحيت: | 500 سيٽ / مهينو |
وضاحت
PECVD Boat (Plasma Enhanced Chemical Vapor Deposition Boat) is a core process-carrying equipment specially designed for the photovoltaic industry, used in the thin film deposition stage of high-efficiency solar cell production. It is made of high-purity and high-temperature resistant materials and can operate stably in the harsh PECVD process environment, ensuring uniform film coating on silicon wafers and helping to improve the conversion efficiency and long-term reliability of the cells. This product is suitable for the deposition of silicon nitride (SiNx) or other functional films in high-efficiency photovoltaic cells such as monocrystalline/multicrystalline silicon wafers, TOPCon, and HJT, and is an indispensable key consumable in photovoltaic cell mass production lines.
ٽيڪنيڪل جي پيراميٽر
Material: Made of isostatic graphite (purity ≥ 99.99%), it can withstand the instantaneous high temperature of 1200°C and frequent cold and hot cycles in the PECVD process. The thermal expansion coefficient is as low as 4.5×10⁻⁶/°C, preventing cracking and deformation. The service life is increased by more than 30% compared to traditional materials.
Super Uniform Thermal Field Design
The high thermal conductivity of graphite (100-120 W/m·K) combined with a honeycomb-shaped airflow channel structure enables rapid and uniform heat conduction within the reaction chamber. The temperature difference between silicon wafers is ≤ ±2°C, and the uniformity of film thickness reaches ±2.5% (industry leading).
Low Contamination Surface Treatment Technology
The surface is treated with a high-density silicon carbide (SiC) coating or a super-smooth polishing process (Ra ≤ 0.2μm), which suppresses the shedding of graphite powder and keeps the particle release rate below 5 particles/cm², meeting the cleanliness requirements of high-end photovoltaic cell manufacturing processes.
Anti-oxidation and Long Service Life Assurance
Optional gradient composite anti-oxidation coatings (such as Al₂O₃/SiC multilayer structure) can be selected, which improves the anti-oxidation performance by 5 times in high-temperature oxygen-containing environments. The service life exceeds 1500 cycles, significantly reducing the production cost per watt.
Why choose Graphite PECVD Boat?
Photovoltaic process adaptation: Customized porosity and surface modification solutions for TOPCon phosphor silicon glass (PSG) decoating, HJT low temperature deposition and other special requirements.
Cost efficiency: natural cost advantage of graphite materials + long service life, the overall cost is reduced by more than 40% compared with ceramic vehicles.
Global verification and reliability: The product is used in the global more than 50GW photovoltaic production line, failure rate < 0.1%.
Semixlab PECVD boat cases:
Coating uniformity: ±2.8% → ±2.1% (optimized 25%)
Hull replacement frequency: 800 times → 1300 times (62.5% extension)
Applicable temperature: ≤800°C
Silicon chip compatibility: 125mm×125mm to 210mm×210mm (support customization)
Service life: ≥1000 times (depending on the specific process conditions)
Surface roughness: Ra≤0.5μm (to ensure low particle pollution)
تڪڙو تفصيل:
1. Other names: PECVD boat,graphite boat for PECVD Process,PECVD Boat (Plasma Enhanced Chemical Vapor Deposition Carrier Boat).
2. Application: photovoltaic industry, used in the thin film deposition stage of high-efficiency solar cell production.
3. Core parameters: Purity ≥99.995%, density 1.80-1.85g/cm³.
Specifications
| پروجيڪٽ | Graphite PECVD Boat parameters |
| Matrix material | Isostatic pressed graphite (density ≥1.85g/cm³, ash ≤50ppm) |
| وڌ ۾ وڌ آپريٽنگ وارو درجه | 1200°C (instantaneous) / 800°C (continuous) |
| ڪوٽنگ جي هڪجهڙائي | ±2.5% (in-chip) / ±3% (interchip) |
| مٿاڇري جي خرابي | Ra≤0.2μm (polished type)/Ra≤0.4μm (coated type) |
| فوجي توانائي جي قوت | ≥60MPa (to ensure structural stability under high loading) |
| Compatible process | SiNx, SiO₂, amorphous silicon (a-Si) film deposition |
اپليڪشن
عام ايپليڪيشن منظرنامو
Single crystal PERC cell silicon nitride antireflection film deposition.
TOPCon cell tunneling oxide layer and polycrystalline silicon layer preparation.
HJT cell amorphous silicon film deposition process.
مقابلي جو فائدو
Outstanding High-Temperature Resistance: Utilizing high-purity graphite or customized ceramic composite materials, it can withstand the continuous high temperature of up to 800°C in the PECVD process without deformation or contamination, ensuring long-term stability.
Precise Uniformity Design: Optimized slot structure and surface treatment technology guarantee uniform heating of silicon wafers during the deposition process, with film thickness consistency within ±3%, significantly enhancing battery efficiency and yield.
Low Contamination and Long Service Life: Special surface coating technology effectively inhibits particle adhesion, reducing the risk of process contamination; strong corrosion resistance ensures a service life of over 1000 cycles, lowering the customer's overall cost.
Compatibility and Flexibility: Supports various silicon wafer sizes (M6/M10/G12, etc.) and different process requirements, offering customized slot spacing and boat structure designs, and is compatible with mainstream PECVD equipment (such as Centrotherm, Meyer Burger, etc.).

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