اعليٰ پاڪائي واري سي آءِ سي ويفر ٻيڙي

In the field of semiconductor manufacturing, high-temperature processes pose extreme challenges to wafer carriers. When the temperature exceeds 1600℃, the traditional quartz carrier (wafer used quartz boat) begins to soften and deform and release pollutants, causing the wafer scrap rate to soar.

High-Purity SiC Wafer Boat, with the inherent material advantages of silicon carbide (SiC), completely solves this industry pain point and becomes an essential tool for advanced semiconductor manufacturing, especially SiC power device production.

Core physical properties and technical parameters of the product:

The excellent performance of the silicon carbide wafer carrier (SiC Wafer Carrier) stems from its unique material science properties. Below is a detailed comparison of key physical parameters:

These parameters directly translate into improved yield and reduced costs in semiconductor manufacturing, as shown in the following:

Thermal performance advantage: SiC's wide bandgap (3.26 eV) ensures that it maintains a stable crystal structure at 2000°C and avoids thermal deformation. High thermal conductivity (4.9 W/cm·K) allows the wafer to be heated more evenly and eliminates lattice defects caused by thermal stress.

Mechanical strength: 9.2 Mohs hardness resists physical impact during the process, and the service life is more than 10 times that of traditional quartz carriers. The unique semicircular slot design controls the wafer contact stress below 5MPa, basically eliminating the high-temperature slip phenomenon.

Chemical inertness: Tolerance to highly corrosive gases such as HF and HCl exceeds 10,000 hours, and zero pollution is maintained in LPCVD, diffusion, oxidation and other processes.

The key role of High Purity SiC Wafer Boat

Our High-Purity SiC Wafer Boat is widely used in the following key semiconductor manufacturing processes:

High-Temperature Annealing: In the production line of sic wafer manufacturer, high-temperature annealing is a key step to activate dopants and repair lattice defects. The high-temperature stability of SiC wafer boat ensures the uniformity and effectiveness of the annealing process.

Epitaxial Growth: Whether it is silicon-based epitaxy or silicon carbide wafer epitaxy, the high temperature resistance and corrosion resistance of SiC wafer boat make it an ideal carrier to ensure high-quality epitaxial layer growth.

تقسيم: In the high-temperature diffusion furnace, the SiC wafer boat in the LPCVD wafer boat can withstand long-term high-temperature treatment to ensure uniform diffusion of doping atoms and form precise electrical properties.

پتلي فلم جمع: Especially for Lpcvd wafer boat applications, the extremely low particle shedding and excellent thermal conductivity of SiC wafer boats help to obtain high-quality, high-uniformity films.

Compatible equipment and process compatibility:

✔ Compatible with mainstream LPCVD furnaces (such as TEL, Kokusai, ASM, SVG, Tystar, etc.)

✔ Customizable wafer specifications such as 100mm/150mm/200mm

✔ Supports horizontal and vertical process equipment installation

Semixlab's SiC wafer boat is an ideal choice to improve your process efficiency and product yield, and is a leader in advanced Semiconductor wafer boat solutions.

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