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سي وي ڊي سلڪون ڪاربائيڊ (سي آءِ سي) ڪوٽنگ

سي وي ڊي سلڪون ڪاربائيڊ (سي آءِ سي) ڪوٽنگ

گھر> شين > سي وي ڊي ڪوٽنگ > سي وي ڊي سلڪون ڪاربائيڊ (سي آءِ سي) ڪوٽنگ

سي سي ڪوٽيڊ پلانيٽري سسپيٽر
سي سي ڪوٽيڊ پلانيٽري سسپيٽر

سي سي ڪوٽيڊ پلانيٽري سسپيٽر


The SiC Coated Planetary Susceptor by Semixlab is engineered for advanced semiconductor production environments requiring exceptional thermal uniformity, long-cycle reliability, and contamination-free operation. Specially developed for Si, SiC, and GaN epitaxial growth, as well as CVD diffusion and high-temperature annealing, this susceptor features a high-purity SiC protective coating that enables stable wafer handling within aggressive chemical atmospheres and temperatures above 1500°C. Designed to reduce defect density, improve epitaxial thickness consistency, and extend equipment uptime. We look forward to your inquiry.

وضاحت

Semixlab's SiC Coated Planetary Susceptor is engineered for next-generation semiconductor epitaxy and CVD thermal processing, where thermal uniformity, defect-free growth, and long-term chamber stability are critical to device yield. This carrier is specifically designed for high-temperature environments exceeding 1500°C and the complex gas chemistry commonly found in silicon, SiC, and GaN epitaxial systems. The proprietary SiC coating provides a dense, high-purity protective layer that prevents contamination and ensures stable, long-cycle operation in demanding production fabs.

In semiconductor epitaxial processes such as Si, SiC, and GaN growth, planetary wafer carriers serve as the core mechanical and thermal platform for transporting wafers into the reaction zone. Their optimized thermal conductivity enables precise temperature distribution, while the planetary rotation system ensures uniformity in growth rates, dopant incorporation, and crystal quality across multiple wafers. In SiC power device manufacturing, even ±1-2% substrate temperature fluctuations impact basal plane dislocation density and device performance. The enhanced thermal uniformity provided by SiC-coated planetary wafer carriers helps fabs reduce defect density, improve thickness uniformity, and increase batch-to-batch yield.

Beyond epitaxial processes, this susceptor is also critical in chemical vapor deposition diffusion and thermal annealing processes, serving as a stable thermal interface between the heat source and the wafer surface. Its residue-free, low-particle surface characteristics minimize contamination risks during extended thermal cycling, protecting wafers from pitting, particle formation, or backside contamination. Compared to conventional graphite-based support assemblies, Semixlab's SiC coating design significantly extends service life, reduces downtime for cleaning and refurbishment, and delivers lower costs for high-volume production lines.

Each Semixlab SiC Coated Planetary Susceptor is manufactured using high-purity graphite substrates and advanced CVD SiC coating deposition technology to ensure coating adhesion strength, thickness uniformity, and thermal shock resistance. The product offers customizable dimensions and configurations to accommodate leading epitaxial platforms used in mainstream semiconductor equipment manufacturing. Semixlab's technical services encompass coating performance evaluation, chamber compatibility consulting, and lifecycle management, designed to help fabs expand capacity, maintain yield, and enhance equipment production cycles. We sincerely look forward to your further inquiries.

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